Extracted Experimental Data of LDMOS Transistors

Citation Author(s):
Ali
Houadef
IGEE
Submitted by:
Ali Houadef
Last updated:
Fri, 03/18/2022 - 11:21
DOI:
10.21227/eva3-ws91
Data Format:
*.pdf
License:
Creative Commons Attribution
107 Views
Categories:
Standards Research Data
Keywords:
LDMOS, RESURF, Trench, Superjunction, review
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Abstract 

We collected BV , RON;SP from over 80 publications reported since the year 2000 and classified them according to their - main- topology and process type.

Instructions: 

The excel sheet contains reported breakdown voltage, on-state resistance, and figure of merit of peer reviwed LDMOS devices that are based on experimental data only.

the data is used in the review article : A Review of LDMOS Topologies. 

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