InGaN Quantum Well PL emission in Tamm cavity

Citation Author(s):
Andrei
Sarua
University of Bristol
Submitted by:
Andrei Sarua
Last updated:
Fri, 09/01/2023 - 04:48
DOI:
10.21227/e2gy-vw70
Data Format:
.csv and text (.txt)
License:
Creative Commons Attribution
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Categories:
Other
Keywords:
optical spectroscopy
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Abstract 

In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum well (QW) emitting structure with integrated micro-cavity, which can be used for VCSEL applications. The micro-cavity exhibiting Tamm plasmon optical states is formed by porous GaN distributed Bragg reflector (DBR) bottom mirror and top plasmonic silver metal mirror. Results of PL, Fourier imaging spectroscopy and finite-difference time-domain simulations are presented and discussed. An estimated 8.5 times enhancement of QW PL intensity at around 480-500 nm and a red-shift of QW peak emission is attributed to the Tamm plasmon resonance in the cavity at around 514 nm.

Instructions: 

Data are two column PL spectra with wavelength in nanometers and intensity for each area.

Funding Agency: 
EPSRC
Grant Number: 
EP/M015181/1

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