Surface Analytic Data of Multiple Oxide-Nitride Dielectrics

Citation Author(s):
Jaekeun
Baek
Myongji University
Sang Jeen
Hong
Myongji University
Submitted by:
Sang Hong
Last updated:
Sat, 08/12/2023 - 03:29
DOI:
10.21227/1ccd-mv18
Data Format:
*.jpeg; *.csv; *.txt
License:
Creative Commons Attribution
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Categories:
Other
Keywords:
Multiple Layered Dielectrics, FT-IR, XRR, TEM, 3D-NAND
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Abstract 

3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. To vertically stack the memory, an oxide-nitride (ON) stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, a part of the silicon nitride (Si3N4) layer is removed by wet etching using phosphoric acid (H3PO4) to make a space for the memory cell. It is important to selectively wet etch only the Si3N4 film while protecting the silicon oxide (SiO2). In this dataset, Fourier Transformed-Infrared (FT-IR), X-ray reflectometry (XRR), and transelectron microscope (TEM) images are shared from the experiment to invesigate the process parameters that affect the etch rate in PECVD. 

Instructions: 

From this dataset, one may further investigate the correlation with the hydrogen content, surface roughness, and thin film density, which are the thin film characteristics that the parameters affect Through the experimental results, we confirmed that the hydrogen content increases according to the deposition pressure, affects the surface roughness, and can be an important factor in improving the wet etching rate.

Funding Agency: 
Korea Evaluation Institute of Industrial Technology
Grant Number: 
K_G012002249202

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